Switching measurement (double pulse) - Zth Messtechnik - transient thermal impedance of power semiconductors - thermal-electrical simulation

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Switching measurement (double pulse)

Example
A large part of the total losses of an inverter are caused by the switching losses of the semiconductors. The exact determination of these losses is important in order to determine effects of different switching frequencies in the simulation. For the characterization a buck converter circuit in double pulse operation is usually used.


Example: Switching behavior of an IGBT in a 3-level NPC1 phase module 300A/650V with inductive load
Switch-on: Uce=400V, Ic=300A, T=150°C
X: 200ns/div
Uce: 100V/div   Ic: 80A/div   Uge: 5V/div   P: 5kW/div   Eon: 6,23mJ
Switch-off: Uce=400V, Ic=300A, T=150°C
X: 200ns/div
Uce: 100V/div  Ic: 50A/div   Uge: 5V/div   P: 20kW/div   Eoff: 33,79mJ
Due to the parasitic inductance in the module, the Uce voltage must
be limited to 600V by means of "active clampling".



Example: Switching behavior of an IGBT in a 2-level phase module 300A/1200V with inductive load
Switch-on: Uce=800V, Ic=300A, T=150°C
X: 200ns/div
Uce: 200V/div  Ic: 80A/div   Uge: 5V/div   P: 50kW/div   Eon: 77,83mJ
Switch-off: Uce=800V, Ic=300A, T=150°C
X: 200ns/div
Uce: 200V/div Ic: 60A/div   Uge: 5V/div   P: 50kW/div   Eoff: 56,33mJ

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